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STFU18N60M2

N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STFU18N60M2

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:MOSFET N-CH 600V TO-220FP

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB18N60M2

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB18N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF18N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF18N60M2

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •Switchingapplicati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STFH18N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STL18N60M2

N-channel600V,0.278廓typ.,9AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh™M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP18N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW18N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

产品属性

  • 产品编号:

    STFU18N60M2

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - FET,MOSFET - 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 描述:

    MOSFET N-CH 600V TO-220FP

供应商型号品牌批号封装库存备注价格
STM
1809+
SMD
1675
就找我吧!--邀您体验愉快问购元件!
询价
ST/意法
TO-220F
265209
假一罚十,原包原标签,常备现货
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST/意法
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
ST
22+
9000
原厂渠道,现货配单
询价
ST/意法
2022
TO-220F
80000
原装现货,OEM渠道,欢迎咨询
询价
STMicroelectronics
2022+
-
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ST
22+
原厂封装
50000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
ST
原厂原封
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST/意法
23+
NA/
915
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多STFU18N60M2供应商 更新时间2021-9-14 10:50:00