丝印：260N4F7；Package：TO-220FP；N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP ultra narrow leads package

Features  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trenc

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STMICROELECTRONICS

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N-channel 40 V, 0.9 mΩ typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

文件：850.58 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package

Features  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trenc

文件：683.86 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP package

Features  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trenc

文件：470.08 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体