isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.98 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

文件：672.14 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET

文件：562.69 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Low input capacitance and gate charge

文件：559.02 Kbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

文件：559.02 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：303.34 Kbytes 页数：3 Pages

ISC

无锡固电

MOSFET N-CH 600V 17A TO-220FP

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意法半导体

N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f Intrinsic fast-recovery body diode\nWorldwide best R\nDS(on)*area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

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意法半导体