Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 30V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.1V(Max) @IC= 3.0A APPLICATIONS · Voltage Regulation · Relay Driver · Generic Switch

文件：285.93 Kbytes 页数：2 Pages

ISC

无锡固电

NPN MEDIUM POWER TRANSISTORS

Description The device is a NPN transistor manufactured using planar Technology resulting in rugged high performance devices. Features ■ SURFACE MOUNTING DEVICE IN MEDIUM POWER DPAK POWER PACKAGE ■ AVAILABLE IN TAPE & REEL PACKING ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEA

文件：181.22 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

NPN MEDIUM POWER TRANSISTORS

Description The device is a NPN transistor manufactured using planar Technology resulting in rugged high performance devices. Features ■ SURFACE MOUNTING DEVICE IN MEDIUM POWER DPAK POWER PACKAGE ■ AVAILABLE IN TAPE & REEL PACKING ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEA

文件：181.22 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

NPN MEDIUM POWER TRANSISTORS

ST

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 3A DPAK

STMICROELECTRONICS

意法半导体