N沟道800 V、0.8 Ohm典型值、6 A MDmesh K5功率MOSFET，DPAK封装

这款N-沟道稳压保护功率MOSFET采用ST革命性的耐雪崩、超高压SuperMESH™ 5技术进行设计。该技术以创新专有的垂直工艺为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。 • 全球出色的品质因数（FoM） \n• 极低的栅极电荷 \n• 经过100％雪崩测试 \n• 稳压保护;

ST

意法半导体

Worldwide best FOM

文件：1.3077 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for a

文件：1.11883 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.59 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for a

文件：1.11883 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体