Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.93266 Mbytes 页数：4 Pages

SIRECT

矽莱克半导体

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：496.71 Kbytes 页数：4 Pages

SIRECTIFIER

矽莱克电子

High voltage NPN Darlington transistor for ignition coil

Description The device is a high voltage NPN transistor in monolithic special Darlington configuration designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). Features ■ High voltage special Darlington structure ■ Very rugged bipolar technolog

文件：355.29 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 24V - 0.0052ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET

Description This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. FEATURES ■ RDS(ON) * Qg industry’s benchmark ■ Conducti

文件：805.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 24V - 0.0052ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET

Description This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. FEATURES ■ RDS(ON) * Qg industry’s benchmark ■ Conducti

文件：805.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.005廓 - 80A - DPAK/IPAK STripFET??III Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduce

文件：314.24 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.005廓 - 80A - DPAK/IPAK STripFET??III Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduce

文件：314.24 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.48 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 40V - 5.4m廓 - 80A - DPAK - TO-220 - IPAK STripFET??Power MOSFET

Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Features ■ Standard threshold drive ■ 100 avalanche tested Application ■ Switching applicati

文件：343.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 24V - 0.0052 ohm - 60A DPAK/IPAK STripFET??III POWER MOSFET

Description The device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduc

文件：510.86 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体