N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：605.28 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET

ST

意法半导体

N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：605.28 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：605.28 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Non-Dimmable 120VAC Evaluation Board

Introduction We are using our AL9910 Non-Dimmable board to evaluate two test condition requirements using high-power LEDs from Cree for functional performance. 1) Test condition requirement #1: VIN=120VAC; OUT=48V/90mA. 2) Test condition requirement #2: VIN=120VAC; OUT=96V/45mA. Customer: Cree

文件：613.36 Kbytes 页数：14 Pages

DIODES

美台半导体

N-Channel MOSFET uses advanced trench technology

文件：1.28083 Mbytes 页数：5 Pages

DOINGTER

杜因特

N沟道400 V、0.85 Ohm典型值、5.4 A SuperMESH功率MOSFET，DPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体