Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

High Speed Switching Applications • 2.0V drive • Low on-resistance: Ron = 449mΩ (max) (@VGS = −2.0 V) Ron = 249mΩ (max) (@VGS = −2.5 V) Ron = 169mΩ (max) (@VGS = −4.0 V)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Small-signal MOSFET

Polarity：P-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -1.7 A \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-12 V ;

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UFM-3

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