Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications

DC-DC converter Applications High-Speed Switching Applications • 4 V drive • Low ON-resistance: RDS(ON) = 225 mΩ (max) (@VGS = −4 V) RDS(ON) = 117 mΩ (max) (@VGS = −10 V)

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丝印：JJ9；Package：2-2U1A；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

DC-DC converter Applications High-Speed Switching Applications • 4 V drive • Low ON-resistance: RDS(ON) = 225 mΩ (max) (@VGS = −4 V) RDS(ON) = 117 mΩ (max) (@VGS = −10 V)

文件：395.41 Kbytes 页数：5 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

DC-DC converter Applications High-Speed Switching Applications • 4 V drive • Low ON-resistance: RDS(ON) = 225 mΩ (max) (@VGS = −4 V) RDS(ON) = 117 mΩ (max) (@VGS = −10 V)

文件：395.41 Kbytes 页数：5 Pages

TOSHIBA

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Small Low ON resistance MOSFETs

Polarity：P-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -2 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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