SSM3J35FS

Small Low ON resistance MOSFETs; Drain current ID -0.1 A \nPower Dissipation PD 0.1 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-10 V \n;

Polarity：P-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国\n

SSM3J35FS

丝印：PZ；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J35MFV

TOSHIBAField-EffectTransistorSiliconP-ChannelMOSType

○High-SpeedSwitchingApplications ○AnalogSwitchApplications •1.2Vdrive •LowON-resistance:Ron=44Ω(max)(@VGS=-1.2V) :Ron=22Ω(max)(@VGS=-1.5V) :Ron=11Ω(max)(@VGS=-2.5V)

TP3J35CBK

6x6mmWashableTactileSwitches

TP3J35CTB

6x6mmWashableTactileSwitches