TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Power Management Switch High Speed Switching Applications • Small Package • Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V) : Ron = 95 mΩ (max) (@VGS = −2.5 V) • Low Gate Threshold Voltage

文件：182.31 Kbytes 页数：6 Pages

TOSHIBA

东芝

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：471.11 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

文件：205.76 Kbytes 页数：6 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

文件：205.76 Kbytes 页数：6 Pages

TOSHIBA

东芝