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SCTWA40N12G24AG数据手册ST中文资料规格书
SCTWA40N12G24AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• AEC-Q101 qualified
• Very high operating junction temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
23+ |
HiP-247-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
24+ |
N/A |
5000 |
原装分货 强势渠道 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
22+ |
HiP-247-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
21+ |
HiP-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
24+ |
HiP-247-3 |
16900 |
原装，正品 |
询价 | ||
ST(意法) |
24+ |
N/A |
12048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
ST/意法 |
23+ |
HIP247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST/意法 |
2223+ |
N/A |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST/意法半导体 |
21+ |
HiP-247-3 |
8860 |
只做原装,质量保证 |
询价 |
