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SCTWA35N65G2V中文资料Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package数据手册ST规格书
SCTWA35N65G2V规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)
技术参数
- 制造商编号
：SCTWA35N65G2V
- 生产厂家
：ST
- Package
：TO-247 long leads
- Grade
：Industrial
- VDSS_nom(V)
：650
- Drain Current (Dc)_max(A)
：45
- RDS(on)_max(@ VGS=20V)(Ω)
：0.072
- PTOT_max(W)
：208
- Qg_typ(nC)
：73
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
24+ |
N/A |
5000 |
原装分货 强势渠道 |
询价 | ||
ST(意法半导体) |
20+ |
TO-247-LongLeads |
30 |
询价 | |||
ST |
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
21+ |
HiP-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
21+ |
HiP-247-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST(意法) |
24+ |
TO-247-3 |
32000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||
ST/意法半导体 |
23+ |
HiP-247-3 |
12820 |
正规渠道,只有原装! |
询价 |
