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SCTWA30N120数据手册ST中文资料规格书
SCTWA30N120规格书详情
描述 Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
特性 Features
• Very tight variation of on-resistance vs. temperature
• Very high operating temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
技术参数
- 制造商编号
：SCTWA30N120
- 生产厂家
：ST
- Package
：TO-247 long leads
- Grade
：Industrial
- VDSS_nom(V)
：1200
- Drain Current (Dc)_max(A)
：45
- RDS(on)_max(@ VGS=20V)(Ω)
：0.1
- PTOT_max(W)
：270
- Qg_typ(nC)
：105
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
TO247 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
22+ |
TO247 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法 |
25+ |
原厂原封可拆 |
54685 |
百分百原装现货有单来谈 |
询价 | ||
ST/意法 |
25+ |
TO247 |
32360 |
ST/意法全新特价SCTWA30N120即刻询购立享优惠#长期有货 |
询价 | ||
ST |
25+ |
TO-247 |
1200 |
原厂原装,价格优势 |
询价 | ||
ST/意法 |
19+ |
TO247 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
23+ |
TO-247 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
19+ |
TO247 |
120 |
原装现货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 |
