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SCTW100N120G2AG中文资料Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package数据手册ST规格书
SCTW100N120G2AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• AEC-Q101 qualified
• High speed switching performance
• Very fast and robust intrinsic body diode
• Low capacitances
• Very high operating junction temperature capability (TJ = 200 °C)
技术参数
- 制造商编号
：SCTW100N120G2AG
- 生产厂家
：ST
- Package
：HIP247
- Grade
：Automotive
- VDSS_nom(V)
：1200
- RDS(on)_max(mΩ)
：39
- Drain Current (Dc)_max(A)
：75
- PTOT_max(W)
：565
- Qg_typ(nC)
：163
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
原厂封装 |
306097 |
有挂就有货只做原装正品 |
询价 | ||
ST |
24+ |
TO-247 |
5000 |
十年沉淀唯有原装 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
24+ |
HIP247 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST(意法) |
2511 |
8484 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
ST |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
24+ |
HIP247 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST |
25+ |
NA |
16900 |
原装，请咨询 |
询价 | ||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
