首页>SCTW100N120G2AG>规格书详情
SCTW100N120G2AG数据手册ST中文资料规格书
SCTW100N120G2AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• AEC-Q101 qualified
• High speed switching performance
• Very fast and robust intrinsic body diode
• Low capacitances
• Very high operating junction temperature capability (TJ = 200 °C)
技术参数
- 制造商编号
：SCTW100N120G2AG
- 生产厂家
：ST
- Package
：HIP247
- Grade
：Automotive
- VDSS_nom(V)
：1200
- RDS(on)_max(mΩ)
：39
- Drain Current (Dc)_max(A)
：75
- PTOT_max(W)
：565
- Qg_typ(nC)
：163
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
HIP247 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
21+ |
HiP247 |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
ST |
24+ |
HIP247 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
22+ |
HIP247 |
12000 |
只有原装,原装,假一罚十 |
询价 | ||
ST |
21+ |
HIP247 |
10000 |
全新原装现货 |
询价 | ||
ST |
25+ |
TO-247 |
3600 |
原厂原装,价格优势 |
询价 | ||
ST |
24+ |
TO-247 |
8000 |
原装，正品 |
询价 | ||
ST |
21+ |
HIP247 |
10000 |
只做原装,质量保证 |
询价 | ||
STMicroelectronics |
24+ |
原厂封装 |
306097 |
有挂就有货只做原装正品 |
询价 |
