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SCTW60N120G2数据手册ST中文资料规格书
SCTW60N120G2规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)
技术参数
- 制造商编号
：SCTW60N120G2
- 生产厂家
：ST
- Package
：HIP247
- Grade
：Industrial
- VDSS_nom(V)
：1200
- RDS(on)_max(mΩ)
：52
- Drain Current (Dc)_max(A)
：60
- PTOT_max(W)
：388
- Qg_typ(nC)
：94
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法半导体 |
23+ |
HIP247-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST |
两年内 |
NA |
5 |
实单价格可谈 |
询价 | ||
ST(意法半导体) |
20+ |
HiP-247 |
3000 |
询价 | |||
ST/意法 |
22+ |
HIP-247-3 |
18000 |
只做原装现货可开票 |
询价 | ||
ST/意法半导体 |
21+ |
HIP247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
2223+ |
HIP-247-3 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST/意法半导体 |
21+ |
HIP247-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
HIP247-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 |
