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SCTWA40N120G2AG中文资料Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package数据手册ST规格书
SCTWA40N120G2AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• AEC-Q101 qualified
• Very high operating junction temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Source sensing pin for increased efficiency
技术参数
- 制造商编号
：SCTWA40N120G2AG
- 生产厂家
：ST
- Package
：HIP247 long leads
- Grade
：Automotive
- VDSS_nom(V)
：1200
- RDS(on)_max(mΩ)
：105
- Drain Current (Dc)_max(A)
：33
- PTOT_max(W)
：290
- Qg_typ(nC)
：63
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法半导体 |
24+ |
HiP-247-3 |
16900 |
原装，正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
21+ |
HiP-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
21+ |
HiP-247-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
HiP-247-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
STMicroelectronics |
23+ |
HiP-247-3 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST/意法半导体 |
2021+ |
HiP-247-3 |
7600 |
原装现货，欢迎询价 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 |
