丝印：SCT35N65；Package：HPAK-7；Silicon carbide Power MOSFET 650 V, 55 m廓 typ., 45 A in an H2PAK-7 package

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丝印：SCT35N65G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generatio

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丝印：SCT35N65G2V；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package

Features • Very fast and robust intrinsic body diode • Low capacitances • Source sensing pin for increased efficiency • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

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STMICROELECTRONICS

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