| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：SCT35N65G2V；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package Features •Veryfastandrobustintrinsicbodydiode •Lowcapacitances •Sourcesensingpinforincreasedefficiency •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：SCT35N65G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Switchingmodepowersupply •EVchargers •DC-DCconverters Description ThissiliconcarbidePowerMOSFETdevicehasbeendevelopedusingST’s advancedandinnovative2ndgeneratio | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
