| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：SCT90N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package Features •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitances Applications •Switchingapplications •Powersupplyforrenewableenergysystems •HighfrequencyDC-DCconverte | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：SCT90N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：SCT90N65G2V；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 18 m廓 typ., 119 A in an HiP247-4 package | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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