丝印：SCT90N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package

Features • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitances Applications • Switching applications • Power supply for renewable energy systems • High frequency DC-DC converte

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丝印：SCT90N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package

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丝印：SCT90N65G2V；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 18 m廓 typ., 119 A in an HiP247-4 package

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