丝印：SCTW35N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200°C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

文件：205.23 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：SCTW35N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200°C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

文件：205.23 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT35N65G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generatio

文件：206.14 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体