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Marking：SCT60N120G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package Features •AEC-Q101qualified •Highspeedswitchingperformance •Veryfastandrobustintrinsicbodydiode •Lowcapacitances •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •DC-DCconverters •SolarInvertersandrenewableenergy •SMPS •OBC Des | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：SCT60N120G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV •Onboardcharger( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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