| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：SCT70N120G2；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 package Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：SCT70N120G2；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol Description Thissilicon | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：SCT70N120G2V；Package：HiP247-4；Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Applications •Switchingmodepowersupply •DC-DCconverters •Industr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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