丝印：SCT70N120G2；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

文件：209.88 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT70N120G2；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon

文件：229.28 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT70N120G2V；Package：HiP247-4；Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters • Industr

文件：218.87 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体