丝印：SCT60N120G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package

Features • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • DC-DC converters • Solar Inverters and renewable energy • SMPS • OBC Des

文件：197.08 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia • AEC-Q101 qualified \n• High speed switching performance \n• Very fast and robust intrinsic body diode \n• Low capacitances \n• Very high operating junction temperature capability (TJ = 200 °C);

ST

意法半导体

Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (

文件：242.46 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

文件：201.26 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体