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SCTH40N120G2V7AG	文件：606.14 Kbytes Page：14 Pages	Marking：SCT40N120G2VAG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package Features •AEC-Q101qualified •Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance Applications •Charger •Powersupplyforrenewableenergysystems •HighfrequencyDC-DCco	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
SCTW40N120G2VAG	文件：210 Kbytes Page：12 Pages	Marking：SCT40N120G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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文件：606.14 Kbytes

Page：14 Pages

Marking：SCT40N120G2VAG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Features •AEC-Q101qualified •Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance Applications •Charger •Powersupplyforrenewableenergysystems •HighfrequencyDC-DCco

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SCTW40N120G2VAG

文件：210 Kbytes

Page：12 Pages

Marking：SCT40N120G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

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