SCTH40N120G2V-7

Marking：SCT40N120G2V；Package：H2PAK-7；Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package

Features •Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •SourceKelvinpinforincreasedefficiency Applications •Switchingmodepowersupply •DC-DCconverters •Industri

SCTWA40N120G2V

Marking：SCT40N120G2V；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package

Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol

SCTW40N120G2V

Marking：SCT40N120G2V；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package

SCTH40N120G2V7AG

Marking：SCT40N120G2VAG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Features •AEC-Q101qualified •Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance Applications •Charger •Powersupplyforrenewableenergysystems •HighfrequencyDC-DCco

SCTW40N120G2VAG

Marking：SCT40N120G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package