丝印：SCT40N120G2V；Package：H2PAK-7；Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package

Features • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source Kelvin pin for increased efficiency Applications • Switching mode power supply • DC-DC converters • Industri

文件：369.15 Kbytes 页数：14 Pages

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意法半导体

丝印：SCT40N120G2V；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

文件：228.57 Kbytes 页数：12 Pages

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意法半导体

丝印：SCT40N120G2V；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package

文件：205.57 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT40N120G2VAG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Features • AEC-Q101 qualified • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance Applications • Charger • Power supply for renewable energy systems • High frequency DC-DC co

文件：606.14 Kbytes 页数：14 Pages

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意法半导体

丝印：SCT40N120G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package

文件：210 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体