汽车级碳化硅功率MOSFET，1200 V、33 A、75 mOhm（典型值，TJ = 25 C），HiP247封装

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction t • AEC-Q101 qualified \n• Very high operating junction temperature capability (TJ = 200 °C) \n• Very fast and robust intrinsic body diode \n• Extremely low gate charge and input capacitance;

ST

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丝印：SCT40N120G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package

文件：210 Kbytes 页数：12 Pages

STMICROELECTRONICS

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Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (

文件：257.69 Kbytes 页数：12 Pages

STMICROELECTRONICS

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Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

文件：228.57 Kbytes 页数：12 Pages

STMICROELECTRONICS

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