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SCTWA40N120G2AG中文资料意法半导体数据手册PDF规格书
| 厂商型号 |
SCTWA40N120G2AG |
| 功能描述 | Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package |
| 丝印标识 | |
| 封装外壳 | HiP247 |
| 文件大小 |
257.69 Kbytes |
| 页面数量 |
12 页 |
| 生产厂商 | STMicroelectronics |
| 企业简称 |
STMICROELECTRONICS【意法半导体】 |
| 中文名称 | 意法半导体集团官网 |
| 原厂标识 | STMICROELECTRONICS |
| 数据手册 | |
| 更新时间 | 2025-8-5 17:32:00 |
| 人工找货 | SCTWA40N120G2AG价格和库存，欢迎联系客服免费人工找货 |
SCTWA40N120G2AG规格书详情
特性 Features
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
HiP-247-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
ST/意法半导体 |
21+ |
HiP-247-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
21+ |
HiP-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
22+ |
HiP-247-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
23+ |
HiP-247-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
24+ |
HiP-247-3 |
16900 |
原装，正品 |
询价 | ||
ST/意法 |
23+ |
HIP247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
