丝印：SCT40N120G2AG；Package：HiP247；Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (

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STMICROELECTRONICS

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