丝印：SCT35N65；Package：HPAK-7；Silicon carbide Power MOSFET 650 V, 55 m廓 typ., 45 A in an H2PAK-7 package

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STMICROELECTRONICS

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碳化硅功率MOSFET，650 V、45 A、55 mOhm（典型值，TJ = 25 C），H2PAK-7封装

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction t • Very fast and robust intrinsic body diode \n• Extremely low gate charge and input capacitance \n• Source sensing pin for increased efficiency;

ST

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丝印：35N65AG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd

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STMICROELECTRONICS

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汽车级碳化硅功率MOSFET，650 V、45 A、55 mOhm（典型值，TJ = 25 C），H2PAK-7封装

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction t • AEC-Q101 qualified \n• Very fast and robust intrinsic body diode \n• Extremely low gate charge and input capacitance \n• Source sensing pin for increased efficiency;

ST

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