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Marking：SCT100N120G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package Features •AEC-Q101qualified •Highspeedswitchingperformance •Veryfastandrobustintrinsicbodydiode •Lowcapacitances •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Tractionforinverters •DC-DCconverters •Solarinverters •OBC Descriptio | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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