丝印：S305PZ；Package：SOT223；80 V, 4.5 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：293.1 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：S306NZ；Package：SC-73；100 V, 5.1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：308.19 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：S306NZ；Package：SOT223；100 V, 5.1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：294.41 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor

Features and benefits  Low collector-emitter saturation voltage VCEsat  High collector current capability IC and ICM  High collector current gain (hFE) at high IC  High efficiency due to less heat generation  Smaller Printed-Circuit Board (PCB) area than for conventional transistors

文件：915.2 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：290.03 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：S3100；Package：POWERDI5；3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Reverse Leakage Current Low Forward Voltage Drop High Forward Surge Current Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualifi

文件：218.18 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：S3100；Package：POWERDI5；3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Reverse Leakage Current Low Forward Voltage Drop High Forward Surge Current Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualifi

文件：218.18 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：S310；Package：SOD-123FL；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - For surface mounted applications. - Low power loss, high efficiency. - High forward surge current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

文件：466.18 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：S30H120H；Package：TO-247-2L；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.27 V (typ.) (3) Low total capacitive charge: Qc = 162 nC (typ.) (4) Low reverse current: IR = 2.8 μA (ty

文件：449.64 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：S30N120HB；Package：TO-247；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 80 nC (typ.) (4) Low reverse curre

文件：446.41 Kbytes 页数：7 Pages

TOSHIBA

东芝