MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE • IDC DC current .................................. 20A • VRRM Repetitive peak reverse voltage ......................300/600V • trr Reverse recovery time ............. 0.4µs • Insulated Type APPLICATION Free wheel use, Welder

文件：48.76 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE APPLICATION Free wheel use, Welder

文件：47.18 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

Size 16 solid machined contacts for TRIM TRIO connectors

Features and benefits * Made from high conductive copper alloy wih gold or tin over nickel pate finish * Heat reated berylium copper locking springs assure proper locking and alignment of contacts in the housing * Closed entry design on RC socket contact 10 prevent probe damage. * Contacts

文件：3.97571 Mbytes 页数：4 Pages

SOURIAU

Size 16 solid machined contacts for TRIM TRIO connectors

Features and benefits * Made from high conductive copper alloy wih gold or tin over nickel pate finish * Heat reated berylium copper locking springs assure proper locking and alignment of contacts in the housing * Closed entry design on RC socket contact 10 prevent probe damage. * Contacts

文件：3.97571 Mbytes 页数：4 Pages

SOURIAU

丝印：20N150；Package：TO-252-2L；N-Channel Super Trench Power MOSFET

General Features ● VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested

文件：294.72 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =20A RDS(ON)

文件：482.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：20N650；Package：TO-220F；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

文件：1.50672 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：20N650；Package：TO-220；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

文件：1.50672 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：20N650；Package：TO-263；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

文件：1.50672 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：20P10；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-100V,ID =-20A RDS(ON)

文件：214.87 Kbytes 页数：7 Pages

RECTRON

丽正国际