Silicon N Channel IGBT High Speed Power Switching

Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max

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瑞萨

Silicon N Channel IGBT High Speed Power Switching

• Trench gate technology (G5H series)\n• Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ\n• High speed switching tf = 150 ns typ\n• Low leak current ICES = 1 μA max ;

Renesas

瑞萨

400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

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Microsemi

美高森美

1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

DESCRIPTION This surface mount TransientVoltage Suppressor (TVS) product family includes a rectifier diode element in series and opposite direction to achieve low capacitance below 100 pF. They are also available as RoHS Compliant with an e3 suffix. The low TVS capacitance may be used for prote

文件：241.7 Kbytes 页数：4 Pages

Microsemi

美高森美

1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

DESCRIPTION This surface mount TransientVoltage Suppressor (TVS) product family includes a rectifier diode element in series and opposite direction to achieve low capacitance below 100 pF. They are also available as RoHS Compliant with an e3 suffix. The low TVS capacitance may be used for prote

文件：241.7 Kbytes 页数：4 Pages

Microsemi

美高森美