Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

文件：54.68 Kbytes 页数：4 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.155Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：297.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

文件：54.68 Kbytes 页数：4 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：125.45 Kbytes 页数：9 Pages

RENESAS

瑞萨

Power MOSFETs

Renesas

瑞萨