BC3406

Marking：R6；Package：SOT-23；Plastic-Encapsulate MOSFETS

DESCRIPTION TheBC3406useadvancedtrenchtechnologytoprovideexcellent RDS(ON)andlowgatecharge.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications.

BCM847DS

Marking：R6；Package：SC-74；NPN/NPN matched double transistor

1.Generaldescription NPN/NPNmatcheddoubletransistorinaSOT457(SC-74)Surface-MountedDevice(SMD)plastic package.Thetransistorsarefullyisolatedinternally. PNP/PNPcomplement:BMC857DS 2.Featuresandbenefits •Currentgainmatching •Base-emittervoltagematching •Drop-in

BZX84-B6V8

Marking：R6；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX84-B6V8-Q

Marking：R6；Package：TO-236AB；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX84W-C12

Marking：R6；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

BZX84W-C12-Q

Marking：R6；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 •Qualifiedaccordingto

ISL9016IRUBBZ-T

Marking：R6；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •

MBR0560

Marking：R6；Package：SOD-123；SOD-123 Plastic-Encapsulate Diodes

Features LeadFreeFinish/RoHSCompliant ExtremelyLowThermalResistance ForSurfaceMountApplicationandHighCurrent Capability

PMP4501G

Marking：R6；Package：SC-88A；NPN/NPN matched double transistors

Features *Currentgainmatching *Base-emittervoltagematching *CommonemitterconfigurationforSOT353types *Application-optimizedpinout

PMV30ENEA

Marking：R6；Package：TO-236AB；40 V N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •ExtendedtemperaturerangeTj=175°C •TrenchMOSFE