784383560068HT

Marking：R68；WE-MAIA SMT Power Inductor

GeneralProperties: AmbientTemperature(referring toIR)-55upto+110°C OperatingTemperature-55upto+150°C StorageConditions(inoriginal packaging)

784383770068HT

Marking：R68；WE-MAIA SMT Power Inductor

GeneralProperties: AmbientTemperature(referring toIRP)-55°Cupto+110°C OperatingTemperature-55°Cupto+150°C StorageConditions(inoriginal packaging)

AP431AY

Marking：R6**；Package：SOT-25；Adjustable Precision Shunt Regulator

■Description TheAP431/AP431Aare3-terminaladjustableprecisionshuntregulatorswithguaranteedtemperaturestabilityovertheapplicableextendedcommercialtemperaturerange.Theoutputvoltagemaybesetatanylevelgreaterthan2.495V(VREF)upto36Vmerelybyselectingtwoexternalresi

BFQ67R

Marking：R67；Package：SOT-23；Silicon NPN Planar RF Transistor

Features •Smallfeedbackcapacitance •Lownoisefigure •Hightransitionfrequency •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC    andWEEE2002/96/EC Applications    Lownoisesmallsignalamplifiersupto2GHz.This    transistorhassuperiornoisefigur

R6002ENH

Marking：R6002ENH；Package：SOP8；Nch 600V 2A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching

R6004RND3

Marking：R6004RND3；Package：TO-252；Nch 600V 4A Power MOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switching

R6007RND3

Marking：R6007RND3；Package：TO-252；Nch 600V 7A Power MOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switching

R6009END3

Marking：R6009E；Package：TO-252；Nch 600V 9A Power MOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Drivecircuitscanbesimple. 4)Paralleluseiseasy. 5)Pb-freeplating;RoHScompliant Application Switching

R6009RND3

Marking：R6009RND3；Package：TO-252；Nch 600V 9A Power MOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switching

R6011END3

Marking：R6011E；Package：TO-252；Nch 600V 11A Power MOSFET

Features 1)Lowon-resistance 2)Lowradiationnoise 3)Drivecircuitscanbesimple 4)Paralleluseiseasy 5)Pb-freeplating;RoHScompliant Application Switching