丝印：R6030ENZ4；Package：TO-247；Nch 600V 30A Power MOSFET

Features 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant Application Switching

文件：2.16389 Mbytes 页数：15 Pages

ROHM

罗姆

丝印：R6030ENZ4；Package：TO-247；Nch 600V 30A Power MOSFET

Features 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant Application Switching

文件：2.16389 Mbytes 页数：15 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：359.03 Kbytes 页数：2 Pages

ISC

无锡固电