丝印：R6；Package：SOT-23；Plastic-Encapsulate MOSFETS

DESCRIPTION The BC3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：260.62 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：R6；Package：SC-74；NPN/NPN matched double transistor

1. General description NPN/NPN matched double transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. PNP/PNP complement: BMC857DS 2. Features and benefits • Current gain matching • Base-emitter voltage matching • Drop-in

文件：241.56 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：R6；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R6；Package：TO-236AB；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：323.9 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R6；Package：SOT323；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 3. Applications • Gene

文件：264.75 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R6；Package：SC-70；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 • Qualified according to

文件：233.91 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R6；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：R6；Package：SOD-123；SOD-123 Plastic-Encapsulate Diodes

Features Lead Free Finish/RoHS Compliant Extremely Low Thermal Resistance For Surface Mount Application and High Current Capability

文件：2.2008 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：R6；Package：SC-88A；NPN/NPN matched double transistors

Features * Current gain matching * Base-emitter voltage matching * Common emitter configuration for SOT353 types * Application-optimized pinout

文件：122.71 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R6；Package：TO-236AB；40 V N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFE

文件：259.67 Kbytes 页数：14 Pages

NEXPERIA

安世