零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IntegratedStarterAlternator Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemper | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=75V,Rds(on)=0.007ohm,Id=140A?? Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtempe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemper | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedProcessTechnology Description ThisAdvancedPlanarStripeHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFETÆPowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtem | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemper | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description ThisAdvancedPlanarStripeHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description ThisAdvancedPlanarStripeHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HighEfficiencySynchronousRectificationinSMPS Description ThisAdvancedPlanarStripeHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
High-precisionLowVoltageDetector | POWERLowpower Semiconductor inc 微源半导体微源半导体股份有限公司 | POWER | ||
LowInputVoltage,SynchronousStep-DownDC/DCController | LINERLinear Technology 线性技术公司 | LINER | ||
NoRSENSE,LowEMI,SynchronousDC/DCControllerwithOutputTracking | LINERLinear Technology 线性技术公司 | LINER | ||
NoRSENSETM,LowEMI,SynchronousDC/DCControllerwithOutputTracking | LINERLinear Technology 线性技术公司 | LINER |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
POTENS/博盛 |
20+ |
PPAK3X3 |
5500 |
代理库存,房间现货,有挂就是现货 |
询价 | ||
POTENS/博盛 |
22+ |
PPAK3X3 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
POTENS |
24+25+/26+27+ |
DFN-贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
POTENS/博盛 |
23+ |
PPAK5X6 |
98000 |
原装现货假一罚十 |
询价 | ||
23+ |
N/A |
90450 |
正品授权货源可靠 |
询价 | |||
Potens(博盛半导体) |
2112+ |
PPAK3X3 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
PDC |
PPAK3x3 |
95868 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
POTENS/博盛 |
23+ |
PPAK3X3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
POTENS/博盛 |
20+ |
PPAK3X3 |
120000 |
只做原装 可免费提供样品 |
询价 | ||
POTENS/博盛 |
22+21+ |
PPAK3X3 |
5180 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 |
相关规格书
更多- PDI1284P11DGG
- PDI1394L40BE
- PDIUSBD11D
- PDIUSBD12D
- PDIUSBH11AD
- PDIUSBP11AD
- PDIUSBP11APW
- PDN-001QS
- PDTA114EK
- PDTA143EU
- PDTA144EK
- PDTC114EU
- PDTC143EK
- PDTC144EE
- PDTC144EU
- PE-65554
- PE-67583
- PE-68026
- PE-68515T
- PEB20320HV3.2
- PEB20324HV2.2
- PEB2035NV4.1
- PEB2045N
- PEB2045P
- PEB2046NVA3
- PEB2050NV2.2
- PEB2054N
- PEB20550HV1.3
- PEB2055NVA3
- PEB2060NV4.5
- PEB2070NV2.4
- PEB2075N
- PEB2081N
- PEB2084V1.3
- PEB2085NV2.3
- PEB2086HV1.1
- PEB2086N
- PEB2086NV1.4
- PEB2091N
- PEB2091NV4.4
- PEB2091NV5.3
- PEB2095NVA5
- PEB2096V2.1
- PEB2235NV4.1
- PEB22522FV2.1
相关库存
更多- PDI1284P11DL
- PDI1394P25BD
- PDIUSBD12
- PDIUSBD12PW
- PDIUSBH11ANB
- PDIUSBP11ADB
- PDN001
- PDN002
- PDTA124XE
- PDTA144EE
- PDTC114EK
- PDTC124XE
- PDTC143EU
- PDTC144EK
- PE3236
- PE-67540
- PE-68025
- PE-68515L
- PEB2026T-P
- PEB20320HV3.4
- PEB2035N
- PEB2035PV4.1
- PEB2045NVA3
- PEB2046N
- PEB2050N
- PEB2050PV2.2
- PEB2054NV1.0
- PEB2055N
- PEB2060N
- PEB2070N
- PEB2070PV2.4
- PEB2075NV1.3
- PEB2081NV3.4
- PEB2085N
- PEB2086H
- PEB2086HV1.4
- PEB2086NV1.1
- PEB20901NV5.1
- PEB2091NV4.3
- PEB2091NV5.1
- PEB20950NV1.1
- PEB2095PVA5
- PEB22320NV2.1
- PEB2236NV2.1
- PEB2254H