40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. FEATURES • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged

文件：76.82 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：M2；Package：SOT23；40 V low VCEsat NPN/PNP transistor

FEATURES •600 mW total power dissipation •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replaces two SOT23 packaged low VCEsat transistors on same PCB area •Reduces required PCB area •Reduced pick and place cos

文件：585.6 Kbytes 页数：12 Pages

NEXPERIA

安世

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5140S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat gener

文件：60.43 Kbytes 页数：8 Pages

PHI

飞利浦

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High PC, low VCE(sat), high current switching. Applications Medium power switching and muting, linear regulators, LCD back-lighting, supply line switching circuits.

文件：781.45 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：528.57 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：414S；Package：SOT-89；NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：528.57 Kbytes 页数：6 Pages

PANJIT

強茂

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：547.63 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：4140SW；Package：SOT-223；NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：547.63 Kbytes 页数：6 Pages

PANJIT

強茂

30 V Low VCE(sat) NPN Transistor

FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, v

文件：187.44 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：670.65 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子