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PBSS4140S

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5140S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat gener

文件:60.43 Kbytes 页数:8 Pages

PHI

PHI

PHI

PBSS4140S

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High PC, low VCE(sat), high current switching. Applications Medium power switching and muting, linear regulators, LCD back-lighting, supply line switching circuits.

文件:781.45 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

PBSS4140SH

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件:528.57 Kbytes 页数:6 Pages

PANJIT

強茂

PBSS4140SH_R1_00001

丝印:414S;Package:SOT-89;NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件:528.57 Kbytes 页数:6 Pages

PANJIT

強茂

PBSS4140SW

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件:547.63 Kbytes 页数:6 Pages

PANJIT

強茂

PBSS4140SW_R2_00001

丝印:4140SW;Package:SOT-223;NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件:547.63 Kbytes 页数:6 Pages

PANJIT

強茂

PBSS4140S

40 V low VCEsat NPN transistor

恩XP

恩XP

PBSS4140S

双极晶体管

BlueRocket

蓝箭电子

PBSS4140S

General purpose and low VCEsat bipolar transistors

Nexperia

安世

详细参数

  • 型号:

    PBSS4140S

  • 功能描述:

    两极晶体管 - BJT TRANS BISS AMMO LARGE

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
恩XP
23+
SOT-54
18000
原装正品假一罚百!可开增票!
询价
恩XP
23+
TO-92
50000
全新原装正品现货,支持订货
询价
PHI
NA
8553
一级代理 原装正品假一罚十价格优势长期供货
询价
恩XP
22+
TO-92
20000
原装现货,实单支持
询价
恩XP
23+
TO-92
89630
当天发货全新原装现货
询价
恩XP
23+
TO92
8000
只做原装现货
询价
恩XP
23+
TO92
7000
询价
恩XP
25+
SOT-54
880000
明嘉莱只做原装正品现货
询价
恩XP
25+
SMD
90000
全新原装现货
询价
恩XP
24+
8000
询价
更多PBSS4140S供应商 更新时间2026-4-18 9:03:00