NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：528.57 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：414S；Package：SOT-89；NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：528.57 Kbytes 页数：6 Pages

PANJIT

強茂

低电压双极晶体管

Panjit

強茂

NPN Low VCE(SAT) Transistor

Features  Silicon NPN epitaxial type  Low VCE(SAT) 0.25V(max)@IC/IB= 1A / 100mA  High collector current capability  Excellent DC current gain characteristics  PNP complement : PBSS5140SH  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：547.63 Kbytes 页数：6 Pages

PANJIT

強茂

40 V, 1A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting •

文件：68.63 Kbytes 页数：9 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦