| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PBSS4140T | 30 V Low VCE(sat) NPN Transistor FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improveddevicereliabilityduetoreducedheatgeneration. APPLICATIONS •Generalpurposeswitchingandmuting •LCDbacklighting •Supplylineswitchingcircuits •Batterydrivenequipment(mobilephones,v | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | |
PBSS4140T | Silicon NPN transistor in a SOT-23 Plastic Package Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | |
PBSS4140T | Marking：ZT；Package：SOT23；40 V, 1 A NPN low VCEsat (BISS) transistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5140T. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improveddevicereliabilityduetoreducedheatgeneration 3.Applications •Ge | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
PBSS4140T | 40 V, 1A NPN low VCEsat (BISS) transistor DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS5140T. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities. •Improveddevicereliabilityduetoreducedheatgeneration. APPLICATIONS •Generalpurposeswitchingandmuting • | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
PBSS4140T | Low VCEsat (BISS) transistors | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
Marking：ZT；Package：SOT23；40 V, 1 A NPN low VCEsat (BISS) transistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5140T-Q. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improveddevicereliabilityduetoreducedheatgeneration •Qualifiedaccording | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：ZT；Package：SOT23；40 V, 1 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5140T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improveddevicereliabilityduetoreducedheatgenera | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
40 V, 1 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5140T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improveddevicereliabilityduetoreducedheatgenera | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
40 V, 1A NPN low VCEsat (BISS) transistor | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 1A TO236AB | Nexperia USA Inc. Nexperia USA Inc. | Nexperia USA Inc. |
详细参数
- 型号：
PBSS4140T
- 功能描述：
两极晶体管 - BJT TRANS BISS TAPE-11
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA |
21+ |
15000 |
只做原装正品!现货库存!可开13点增值税票 |
询价 | |||
恩XP |
新年份 |
SOT23 |
57582 |
原装 原装 原装 只做原装现货 |
询价 | ||
NEXPERIA |
24+ |
SOT-23 |
1829 |
原装正品,现货库存,1小时内发货 |
询价 | ||
恩XP |
25+ |
SOT-23 |
38149 |
NXP/恩智浦全新特价PBSS4140T即刻询购立享优惠#长期有货 |
询价 | ||
215 |
327000 |
15+ |
0 |
原厂原装 |
询价 | ||
恩XP |
16+/17+ |
SOT-23 |
3500 |
原装正品现货供应56 |
询价 | ||
NEXPERIA |
23+ |
SOT23 |
30000 |
NXP现货商!常备进口原装库存现货! |
询价 | ||
NEXPERIA/安世 |
2019+ |
SOT23 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
NEXPERIA |
21+20 |
SOT23 |
120000 |
全新原装公司现货
|
询价 | ||
Nexperia/安世 |
21+ |
SOT-23 |
426583 |
十年信誉,只做原装,有挂就有现货! |
询价 |
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