40 V, 1A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting •

文件：275.76 Kbytes 页数：9 Pages

恩XP

30 V Low VCE(sat) NPN Transistor

FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, v

文件：187.44 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：670.65 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：ZT；Package：SOT23；40 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5140T. 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation 3. Applications • Ge

文件：657.96 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 1A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting •

文件：68.63 Kbytes 页数：9 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

40 V, 1A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting •

文件：275.76 Kbytes 页数：9 Pages

恩XP

丝印：ZT；Package：SOT23；40 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5140T-Q. 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation • Qualified according

文件：210.05 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：ZT；Package：SOT23；40 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat genera

文件：202.19 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat genera

文件：202.19 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司