丝印：22；Package：SOT-666；40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V. FEATURES • 300 mW total power dissipation • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Excellent coplanarit

文件：319.36 Kbytes 页数：9 Pages

恩XP

丝印：22；Package：SOT666；40 V low VCEsat NPN transistor

FEATURES •300 mW total power dissipation •Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package •Improved thermal behaviour due to flat leads •Excellent coplanarity due to straight leads •Low collector-emitter saturation voltage •High current capabilities •Reduced required PCB area. AP

文件：522.33 Kbytes 页数：10 Pages

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