40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. FEATURES • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged

文件：76.82 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：M2；Package：SOT23；40 V low VCEsat NPN/PNP transistor

FEATURES •600 mW total power dissipation •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replaces two SOT23 packaged low VCEsat transistors on same PCB area •Reduces required PCB area •Reduced pick and place cos

文件：585.6 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

40 V low VCEsat NPN/PNP transistor

文件：373.16 Kbytes 页数：11 Pages

PHI

飞利浦

40 V low VCEsat NPN/PNP transistor

NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. • 600 mW total power dissipation\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replaces two SOT23 packaged low VCEsat transistors on same PCB area\n• Reduces required PCB area\n• Reduced pick and place costs.\n;

Nexperia

安世

40 V low VCEsat NPN/PNP transistor

NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. • 600 mW total power dissipation\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replaces two SOT23 packaged low VCEsat transistors on same PCB area\n• Reduces required PCB area\n• Reduced pick and place costs\n•;

Nexperia

安世