15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

文件：69.97 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：PBSS2515MB；Package：SOT883B；15 V, 0.5 A NPN low VCEsat (BISS) transistor

文件：1.14939 Mbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

15 V low VCEsat NPN double transistor

恩XP

恩智浦

丝印：1Q；Package：SC-75；15 V, 0.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：242.93 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

15 V, 0.5 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current g

文件：128.07 Kbytes 页数：12 Pages

恩XP

15 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3515F. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat leads. APPLICATIONS • General purpose switching and muting • Low f

文件：66.92 Kbytes 页数：8 Pages

PHI

飞利浦

15 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3515M. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed

文件：151.01 Kbytes 页数：9 Pages

恩XP

丝印：S2；Package：SOT883；15 V, 0.5 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to reduced heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management: –DC-DC converter –Supply line switching –Battery charg

文件：355.63 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：N8；Package：SOT666；15 V low VCE(sat) NPN/PNP transistor

FEATURES •300 mW total power dissipation •Very small 1.6 × 1.2 mm ultra thin package •Excellent coplanarity due to straight leads •Low collector-emitter saturation voltage •High current capability •Improved thermal behaviour due to flat lead •Replaces two SC75/SC89 packaged low VCEsat trans

文件：387.31 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：N9；Package：SOT666；15 V low VCEsat NPN double transistor

1. General description NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplana

文件：201.84 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司