PBSS2515

15 V low VCEsat NPN double transistor

DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •High

PBSS2515E

15 V, 0.5 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinanultrasmallSOT416(SC-75)Surface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentg

PBSS2515E

Marking：1Q；Package：SC-75；15 V, 0.5 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS2515F

15 V low VCEsat NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSC-89(SOT490)plasticpackage. PNPcomplement:PBSS3515F. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improvedthermalbehaviourduetoflatleads. APPLICATIONS •Generalpurposeswitchingandmuting •Lowf

PBSS2515M

15 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3515M. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted

PBSS2515M

Marking：S2；Package：SOT883；15 V, 0.5 A NPN low VCEsat (BISS) transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted-circuitboardrequirements. APPLICATIONS •Powermanagement: –DC-DCconverter –Supplylineswitching –Batterycharg

PBSS2515VPN

Marking：N8；Package：SOT666；15 V low VCE(sat) NPN/PNP transistor

FEATURES •300mWtotalpowerdissipation •Verysmall1.6×1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improvedthermalbehaviourduetoflatlead •ReplacestwoSC75/SC89packagedlowVCEsattrans

PBSS2515VS

15 V low VCEsat NPN double transistor

DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •High

PBSS2515VS

15 V low VCE(sat) NPN double transistor

DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES •300mWtotalpowerdissipation •Verysmall1.6×1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •High

PBSS2515VS

Marking：N9；Package：SOT666；15 V low VCEsat NPN double transistor

1.Generaldescription NPNlowVCEsatdoubletransistorinaSOT666ultrasmallandflatleadSurface-MountedDevice (SMD)plasticpackage. PNPcomplement:PBSS3515VS 2.Featuresandbenefits •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplana