PBSS2515VS中文资料安世数据手册PDF规格书

1. General description

NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device

(SMD) plastic package.

PNP complement: PBSS3515VS

2. Features and benefits

• 300 mW total power dissipation

• Very small 1.6 x 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

• Low collector-emitter saturation voltage

• High current capability

• Improved thermal behavior due to flat lead

• Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area

• Reduces required PCB area

• Reduced pick and place costs

3. Applications

• General purpose switching and muting

• Low frequency driver circuits

• Audio frequency general purpose amplifier applications

• Battery driven equipment (mobile phones, video cameras and hand-held devices)