PBSS2515分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

DESCRIPTION

NPN low VCEsat double transistor in a SOT666 plastic package.

PNP complement: PBSS3515VS.

FEATURES

• 300 mW total power dissipation

• Very small 1.6 x 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

• Low collector-emitter saturation voltage

• High current capability

• Improved thermal behaviour due to flat lead

• Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and muting

• Low frequency driver circuits

• LCD backlighting

• Audio frequency general purpose amplifier applications

• Battery driven equipment (mobile phones, video cameras and hand-held devices).