15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

文件：69.97 Kbytes 页数：12 Pages

PHI

飞利浦

15 V low VCE(sat) NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

文件：149.1 Kbytes 页数：9 Pages

恩XP

丝印：N9；Package：SOT666；15 V low VCEsat NPN double transistor

1. General description NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplana

文件：201.84 Kbytes 页数：9 Pages

NEXPERIA

安世

15 V low VCEsat NPN double transistor

NPN low VCEsat double transistor in a SOT666 plastic package.\n PNP complement: PBSS3515VS. • 300 mW total power dissipation\n• Very small 1.6 x 1.2 mm ultra thin package\n• Excellent coplanarity due to straight leads\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved thermal behaviour due to flat lead\n• Replaces two SC-75/SC-89 packaged low VCEsat transist;

Nexperia

安世

15 V low VCE(sat) NPN double transistor

恩XP

恩智浦